Open‐Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

钝化 硫系化合物 材料科学 量子点 开路电压 纳米技术 能量转换效率 太阳能电池 光电子学 工程物理 电压 电气工程 物理 工程类 图层(电子)
作者
Junwei Liu,Kaihu Xian,Long Ye,Zhihua Zhou
出处
期刊:Advanced Materials [Wiley]
卷期号:33 (29) 被引量:73
标识
DOI:10.1002/adma.202008115
摘要

Abstract Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state‐of‐the‐art lead chalcogenide CQDSC still has an open‐circuit voltage ( V oc ) loss of ≈0.45 V, which is significantly higher than those of c‐Si and perovskite solar cells. Such high V oc loss severely limits the performance improvement and commercialization of lead chalcogenide CQDSCs. In this review, the V oc loss is first analyzed via detailed balance theory and the origin of V oc loss from both solar absorber and interface is summarized. Subsequently, various strategies for improving the V oc from the solar absorber, including the passivation strategies during the synthesis and ligand exchange are overviewed. The great impact of the ligand exchange process on CQD passivation is highlighted and the corresponding strategies to further reduce the V oc loss are summarized. Finally, various strategies are discussed to reduce interface V oc loss from charge transport layers. More importantly, the great potential of achieving performance breakthroughs via various organic hole transport layers is highlighted and the existing challenges toward commercialization are discussed.

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