XNOR门
逻辑门
电子线路
计算机科学
加法器
和或反转
逻辑族
晶体管
与非门
电子工程
材料科学
通流晶体管逻辑
数字电子学
逻辑综合
电气工程
算法
光电子学
CMOS芯片
工程类
电压
作者
Huawei Chen,Xiaoyong Xue,Chunsen Liu,Jinbei Fang,Zhen Wang,Jianlu Wang,David Wei Zhang,Weida Hu,Peng Zhou
标识
DOI:10.1038/s41928-021-00591-z
摘要
A single biological neuron can efficiently perform Boolean operations. Artificial neuromorphic systems, on the other hand, typically require several devices to complete a single operation. Here, we show that neuristors that exploit the intrinsic polarity of two-dimensional materials can perform logic operations in a single device. XNOR gates can be made using ambipolar tungsten diselenide (WSe2), NOR gates using p-type black phosphorus, and OR and AND gates using n-type molybdenum disulfide (MoS2) of different thicknesses. To illustrate the potential of the neuristors, we fabricate logic half-adder and parity-checker circuits using a WSe2 neuristor and a MoS2 neuristor in a two-transistor two-resistor configuration, offering an area saving of 78% compared to circuits based on MoS2 gates in a traditional design. We also propose a binary neural network that is based on a three-dimensional XNOR array, which simulations show should offer an energy efficiency of 622.35 tera-operations per second per watt and a power consumption of 7.31 mW. By using two-dimensional materials with different polarities, single neuristors can act as XNOR, NOR, OR and AND logic gates.
科研通智能强力驱动
Strongly Powered by AbleSci AI