Photoluminescence efficiency of zincblende InGaN/GaN quantum wells

光致发光 热离子发射 量子阱 自发辐射 量子效率 纤锌矿晶体结构 材料科学 异质结 光电子学 无辐射复合 激子 凝聚态物理 光学 物理 电子 半导体 半导体材料 量子力学 冶金 激光器
作者
Stephen A. Church,M. Quinn,K. Cooley-Greene,Boning Ding,Abhiram Gundimeda,M. J. Kappers,Martin Frentrup,D. J. Wallis,Rachel A. Oliver,David J. Binks
出处
期刊:Journal of Applied Physics [American Institute of Physics]
卷期号:129 (17) 被引量:12
标识
DOI:10.1063/5.0046649
摘要

Growing green and amber emitting InGaN/GaN quantum wells in the zincblende, rather than the wurtzite, crystal phase has the potential to improve efficiency. However, optimization of the emission efficiency of these heterostructures is still required to compete with more conventional alternatives. Photoluminescence time decays were used to assess how the quantum well width and number of quantum wells affect the recombination rates, and temperature dependent photoluminescence was used to determine the factors affecting recombination efficiency. The radiative recombination lifetime was found to be approximately 600 ps and to increase weakly with well width, consistent with a change in the exciton binding energy. The relative efficiency at room temperature was found to increase by a factor of five when the number of wells was increased from one to five. Furthermore, the efficiency increased by factor 2.2 when the width was increased from 2.5 to 7.5 nm. These results indicate that thermionic emission is the most important process reducing efficiency at temperatures in excess of 100 K. Moreover, the weak dependence of the rate of radiative recombination on well width means that increasing well thickness is an effective way of suppressing thermionic emission and thereby increasing efficiency in zincblende InGaN/GaN quantum wells, in contrast to those grown in the wurtzite phase.
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