响应度
材料科学
光电导性
光电子学
薄膜
电场
光电探测器
极化(电化学)
响应时间
各向异性
灵敏度(控制系统)
锑
光学
纳米技术
物理
计算机图形学(图像)
工程类
物理化学
化学
冶金
量子力学
计算机科学
电子工程
作者
Jia Yi,Hui Deng,Xiao Lin,Shenzhong Chen,Yong Xia,Zhixu Wu,Jinling Yu,Shuying Cheng,Yunfeng Lai
标识
DOI:10.1002/admi.202101504
摘要
Abstract Antimony sulfide (Sb 2 S 3 ) with high absorption coefficient reveals great potential for photodetectors (PDs) in various fields of military and national economy. A new type of depleted Sb 2 S 3 thin film photoconductive detector by using titanium dioxide (TiO 2 ) interlayer with the structure of Au/(glass/TiO 2 :)Sb 2 S 3 /Au is designed. Compared with normal Au/Sb 2 S 3 /Au devices, the depleted Sb 2 S 3 PDs obtain a higher switching ratio of 90, greatly enhancing responsivity and specific detectivity. Owing to the electric field of the depletion region, the response time significantly decreases from 23.2 to 0.6 ms. In addition, the anisotropic Sb 2 S 3 film with [120] dominated horizontal orientation is suitable for polarized light detection. The peak‐to‐valley ratio of the depleted Sb 2 S 3 PD reaches 1.3 at polarized light. The results and methods of this study are expected to expand the application of PDs based on Sb 2 S 3 films.
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