Synthesis and microwave absorption properties of SiC nanowires reinforced SiOC ceramic

Silicon carbide nanowires (SiC NWs) reinforced SiOC ceramics were fabricated through in situ growth of SiC NWs in SiOC ceramics by pyrolysis of polysiloxane. SiC NWs were in situ formed by the addition of ferrocene, the content of SiC NWs increased with the increases of annealing temperature and ferrocene content. Due to the formation of SiC NWs in the inter-particle pores of SiOC ceramics, the SiOC particles were bridged by SiC NWs, which led to the increase of electrical conductivity. With the increase of SiC NWs content, the real permittivity and the imaginary permittivity increased from 3.63 and 0.14 to 10.72 and 12.17, respectively, and the minimum reflection coefficient decreased from −1.22 dB to −20.01 dB, demonstrating the SiOC ceramics with SiC NWs had a superior microwave-absorbing ability.