塞贝克系数
极化子
凝聚态物理
材料科学
各向异性
电阻率和电导率
热电效应
钒酸铋
阿累尼乌斯方程
霍尔效应
电子迁移率
热电材料
活化能
热导率
化学
物理
电子
热力学
光学
光催化
复合材料
催化作用
有机化学
量子力学
生物化学
作者
Alexander J. E. Rettie,William D. Chemelewski,Jeffrey Lindemuth,John S. McCloy,Luke G. Marshall,Jianshi Zhou,David Emin,C. Buddie Mullins
摘要
DC electrical conductivity, Seebeck and Hall coefficients are measured between 300 and 450 K on single crystals of monoclinic bismuth vanadate that are doped n-type with 0.3% tungsten donors (W:BiVO4). Strongly activated small-polaron hopping is implied by the activation energies of the Arrhenius conductivities (about 300 meV) greatly exceeding the energies characterizing the falls of the Seebeck coefficients' magnitudes with increasing temperature (about 50 meV). Small-polaron hopping is further evidenced by the measured Hall mobility in the ab-plane (10−1 cm2 V−1 s−1 at 300 K) being larger and much less strongly activated than the deduced drift mobility (about 5 × 10−5 cm2 V−1 s−1 at 300 K). The conductivity and n-type Seebeck coefficient is found to be anisotropic with the conductivity larger and the Seebeck coefficient's magnitude smaller and less temperature dependent for motion within the ab-plane than that in the c-direction. These anisotropies are addressed by considering highly anisotropic next-nearest-neighbor (≈5 Å) transfers in addition to the somewhat shorter (≈4 Å), nearly isotropic nearest-neighbor transfers.
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