XPS analysis of gallium oxides

Abstract Samples of Ga 2 O, synthesized by reacting Ga 2 O 3 and metallic gallium, are analyzed by XPS measurements. These samples reveal the presence of a new photoelectron signal, assigned to Ga(I), with 3d binding energy of 19.0 eV, which is lower than the measured Ga III (3d) binding energy (20.6 eV) and higher than the measured Ga 0 (3d) binding energy (18.5 eV). A comparison between available XPS data on the Ga 2 O 3 /HZSM-5 catalytic system and the gallium binding energies measured in this work is proposed.