材料科学
铁电性
退火(玻璃)
电容器
正交晶系
锡
结晶
单斜晶系
原子层沉积
光电子学
极化(电化学)
电介质
电极
分析化学(期刊)
电压
图层(电子)
复合材料
结晶学
晶体结构
电气工程
冶金
化学工程
化学
物理化学
工程类
色谱法
作者
Si Joon Kim,Jaidah Mohan,Harrison Sejoon Kim,Jaebeom Lee,Chadwin D. Young,Luigi Colombo,Scott R. Summerfelt,Tamer San,Jiyoung Kim
摘要
In this letter, the ferroelectric (FE) properties of 5-nm-thick Hf0.5Zr0.5O2 (HZO) films deposited by atomic layer deposition have been investigated. By reducing the HZO film thickness to 5 nm, low-voltage operation (1.0 V) of the HZO-based capacitor was achieved while maintaining a remnant polarization (Pr) of about 10 μC/cm2 (i.e., 2Pr of 20 μC/cm2). Meanwhile, in order to form an orthorhombic phase, which is responsible for FE properties, a rapid thermal annealing process was performed after TiN top electrode deposition. The FE properties were realized after low temperature annealing (450 °C for 1 min), making them compatible with the back-end of the line. In addition, the low operating voltage and the suppression of an additional monoclinic phase formation by stress-induced crystallization induced a robust endurance (>1010 cycles at 1.2 V) of the 5-nm-thick HZO sample.
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