High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels

In this paper, high performance InGaN double channel (DC) high electron mobility transistors (HEMTs) are proposed and systematically investigated. Due to the coordination of double InGaN channels, a large maximum drain current density and a distinct double-hump feature of the transconductance and frequency performance are achieved. More importantly, it is revealed that the coupling effect between the two InGaN channels is much stronger than that of the conventional GaN DC HEMTs. This characteristic leads to a remarkable enhancement in the gate voltage swing, indicating the excellent linearity of the InGaN DC HEMTs at both dc and rf conditions. Benefiting from the enhanced electron confinement in InGaN channels, the fabricated HEMTs show a low off state drain leakage current of 0.26 μA/mm and a high on/off current ratio (Ion/Ioff) of 5.1 × 106. In addition, the desirable current collapse and breakdown characteristics are also obtained. This work convincingly demonstrates the great potential and practicality of the InGaN DC HEMTs for high power and high bandwidth applications.