石墨烯
材料科学
离域电子
氧化物
量子点
纳米技术
可变距离跳频
热传导
电子迁移率
载流子
纳米结构
光电子学
异质结
化学物理
复合材料
物理
冶金
量子力学
作者
Mawin J.M. Jimenez,Rafael Furlan de Oliveira,Carlos César Bof Bufon,Marcelo A. Pereira‐da‐Silva,Varlei Rodrigues,Ângelo L. Gobbi,Maria H. O. Piazzetta,F. Alvarez,Carlos L. César,Antônio Riul
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2019-03-20
卷期号:30 (27): 275701-275701
被引量:14
标识
DOI:10.1088/1361-6528/ab118e
摘要
Reduced graphene oxide (rGO) layers are known to be significantly conductive along the basal plane throughout delocalized sp2 domains. Defects present in rGO implies in disordered systems with numerous localized sites, resulting in a charge transport governed mainly by a 2D variable range hopping (VRH) mechanism. These characteristics are observed even in multilayered rGO since the through-plane conduction is expected to be insubstantial. Here, we report on the multilayer assembly of functionalized rGO quantum dots (GQDs) presenting 3D VRH transport that endows elevated charge carrier mobility, ca ∼ 236 cm2 V−1 s−1. Polyelectrolyte-wrapped GQDs were assembled by layer-by-layer technique (LbL), ensuring molecular level thickness control for the formed nanostructures, along with the adjustment of the film transparency (up to 92% in the visible region). The small size and the random distribution of GQDs in the LbL structure are believed to overcome the translational disorder in multilayered films, contributing to a 3D interlayer conduction that enhances the electronic properties. Such high-mobility, transparency-tunable films assembled by a cost-effective method possess interesting features and wide applicability in optoelectronics.
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