MESFET
人工神经网络
非线性系统
微波食品加热
高电子迁移率晶体管
计算机科学
电子工程
一般化
信号(编程语言)
晶体管
工程类
人工智能
场效应晶体管
电气工程
电信
物理
数学
量子力学
电压
程序设计语言
数学分析
作者
Wenyuan Liu,Lin Zhu,Feng Feng,Wei Zhang,Qi‐Jun Zhang,Qian Lin,Gaohua Liu
出处
期刊:Micromachines
[MDPI AG]
日期:2020-08-31
卷期号:11 (9): 831-831
被引量:21
摘要
This paper presents a nonlinear microwave device modeling technique that is based on time delay neural network (TDNN). The proposed technique can accurately model the nonlinear microwave devices when compared to static neural network modeling method. A new formulation is developed to allow for the proposed TDNN model to be trained with DC, small-signal, and large signal data, which can enhance the generalization of the device model. An algorithm is formulated to train the proposed TDNN model efficiently. This proposed technique is verified by GaAs metal-semiconductor-field-effect transistor (MESFET), and GaAs high-electron mobility transistor (HEMT) examples. These two examples demonstrate that the proposed TDNN is an efficient and valid approach for modeling various types of nonlinear microwave devices.
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