材料科学
薄膜
成核
表面粗糙度
光电子学
氩
钪
表面光洁度
电介质
溅射
铁电性
氮化物
复合材料
铝
冶金
图层(电子)
纳米技术
化学
有机化学
作者
Dixiong Wang,Jeffrey Zheng,Zichen Tang,Michael D’Agati,Paria S. M. Gharavi,Xiwen Liu,Deep Jariwala,Eric A. Stach,Roy H. Olsson,Volker Roebisch,Martin Kratzer,Bernd Heinz,Myung‐Geun Han,Kim Kisslinger
出处
期刊:U.S. Department of Energy Office of Scientific and Technical Information - OSTI OAI
日期:2020-07-01
被引量:25
标识
DOI:10.1109/ifcs-isaf41089.2020.9234910
摘要
We report on the properties of Aluminum Scandium Nitride (AlScN) thin films deposited by pulsed-DC co-sputtering. We present the impact of the nitrogen-to-argon gas ratio on the crystal growth orientation, film stress, surface roughness, scandium concentration, and deposition rate of 760-860 nm thick AlScN thin films on Ti/Pt (111). We utilize the optimized process conditions from this study to deposit thin layers of AlScN and to explore the nucleation and orientation of thin AlScN layers on Ti/Pt (111). We report on the ferroelectric properties of 100 nm thick AlScN materials.
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