硒化铜铟镓太阳电池
拉曼光谱
铟
镓
分析化学(期刊)
材料科学
硒化物
光谱学
薄膜
碲化镉光电
光电子学
化学
太阳能电池
光学
纳米技术
硒
冶金
物理
色谱法
量子力学
作者
Jacopo Parravicini,M. Acciarri,Alberto Lomuscio,Matteo Murabito,A. Le Donne,A. Gasparotto,S. Binetti
标识
DOI:10.1177/0003702816681568
摘要
In the thin film solar cells domain, copper indium galium (di)selenide (CIGS) is a material with well-established photovoltaic purpose. Here the presence of a suitable [Ga]/([Ga]+[In]) (GGI) in-depth profile has proved to play a key role in the performance of cells. The implementation of a routine method based on reliable but easily available experimental techniques is mandatory to obtain information on the GGI profile of any CIGS layer, in order to achieve high efficiency chalcogenide layers. In this vein, we here propose and systematically test a simple method for the GGI profile determination based on repeated bromine etching of CIGS thin films followed by Raman analysis of the A 1 peak position. The reliability of the proposed approach is verified using a methodical comparison with energy-dispersive X-ray spectroscopy (EDS) analysis and secondary ion mass spectroscopy (SIMS) profiles, showing a good agreement with the GGI in-depth profiles determined using Raman analysis on bromine etched samples.
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