单层
范德瓦尔斯力
异质结
密度泛函理论
过渡金属
双层
材料科学
电子能带结构
凝聚态物理
电子结构
化学
纳米技术
计算化学
物理
光电子学
分子
膜
生物化学
催化作用
有机化学
作者
Chenxi Zhang,Cheng Gong,Yifan Nie,Kyung-Ah Min,Chaoping Liang,Young Jun Oh,Hengji Zhang,Weihua Wang,Suklyun Hong,Luigi Colombo,Robert M. Wallace,Kyeongjae Cho
出处
期刊:2D materials
[IOP Publishing]
日期:2016-11-30
卷期号:4 (1): 015026-015026
被引量:219
标识
DOI:10.1088/2053-1583/4/1/015026
摘要
Two-dimensional transition metal dichalcogenides (TMDs) are promising low-dimensional materials which can produce diverse electronic properties and band alignment in van der Waals heterostructures. Systematic density functional theory (DFT) calculations are performed for 24 different TMD monolayers and their bilayer heterostacks. DFT calculations show that monolayer TMDs can behave as semiconducting, metallic or semimetallic depending on their structures; we also calculated the band alignment of the TMDs to predict their alignment in van der Waals heterostacks. We have applied the charge equilibration model (CEM) to obtain a quantitative formula predicting the highest occupied state of any type of bilayer TMD heterostacks (552 pairs for 24 TMDs). The CEM predicted values agree quite well with the selected DFT simulation results. The quantitative prediction of the band alignment in the TMD heterostructures can provide an insightful guidance to the development of TMD-based devices.
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