材料科学
凝聚态物理
磁电阻
自旋电子学
反铁磁性
超巨磁阻效应
铁磁性
磁化
单晶
兴奋剂
异质结
磁场
核磁共振
物理
光电子学
量子力学
作者
Shujuan Zhang,Jing Yan,Fang Tang,Jin Wu,Wei-Qi Dong,Dan-Wen Zhang,Fu-Sheng Luo,Lei Chen,Yong Fang,Tao� Zhang,Yang Chai,Weiyao Zhao,Xiaolin Wang,Ren‐Kui Zheng
标识
DOI:10.1021/acsami.1c18848
摘要
Stoichiometric Cr2Se3 single crystals are particular layer-structured antiferromagnets, which possess a noncollinear spin configuration, weak ferromagnetic moments, moderate magnetoresistance (MR ∼14.3%), and poor metallic conductivity below the antiferromagnetic phase transition. Here, we report an interesting >16 000% colossal magnetoresistance (CMR) effect in Ti (1.5 atomic percent) lightly doped Cr2Se3 single crystals. Such a CMR is approximately 1143 times larger than that of the stoichiometric Cr2Se3 crystals and is rarely observed in layered antiferromagnets and is attributed to the frustrated spin configuration. Moreover, the Ti doping not only dramatically changes the electronic conductivity of the Cr2Se3 crystal from a bad metal to a semiconductor with a gap of ∼15 meV but also induces a change in the magnetic anisotropy of the Cr2Se3 crystal from strong out-of-plane to weak in-plane. Further, magnetotransport measurements reveal that the low-field MR scales with the square of the reduced magnetization, which is a signature of CMR materials. The layered Ti:Cr2Se3 with the CMR effect could be used as two-dimensional (2D) heterostructure building blocks to provide colossal negative MR in spintronic devices.
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