X射线光电子能谱
基质(水族馆)
薄膜
分析化学(期刊)
氧化物
电介质
椭圆偏振法
等离子体增强化学气相沉积
作者
NM Nick Terlinden,G Gijs Dingemans,van de Mcm Richard Sanden,Wmm Erwin Kessels
摘要
Al 2 O 3 synthesized by plasma-assisted atomic layer deposition yields excellent surface passivation of crystalline silicon (c-Si) for films down to ∼5 nm in thickness. Optical second-harmonic generation was employed to distinguish between the influence of field-effect passivation and chemical passivation through the measurement of the electric field in the c-Si space-charge region. It is demonstrated that this electric field—and hence the negative fixed charge density—is virtually unaffected by the Al2O3 thickness between 2 and 20 nm indicating that a decrease in chemical passivation causes the reduced passivation performance for <5 nm thick Al2O3 films.
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