电解质
电压
材料科学
二氧化二钒
光电子学
离子键合
太赫兹辐射
金属-绝缘体过渡
共振(粒子物理)
纳米技术
薄膜
金属
化学
离子
电极
电气工程
物理
原子物理学
工程类
有机化学
物理化学
冶金
作者
Michael Goldflam,M. K. Liu,B. C. Chapler,H. T. Stinson,Aaron Sternbach,Alexander McLeod,J. D. Zhang,K. W. Geng,M. Royal,Bong-Jun Kim,Richard D. Averitt,N.M. Jokerst,D. R. Smith,Kim Ht,D. N. Basov
摘要
We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte–VO2 interface.
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