非晶硅
等效串联电阻
光电子学
等效电路
光电流
材料科学
二极管
硅
太阳能电池
指数函数
电压
物理
电气工程
工程类
晶体硅
数学
数学分析
作者
J. Merten,J.M. Asensi,C. Voz,A. Shah,R. Platz,J. Andreu
摘要
An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules is presented. It is based on the classic combination of a diode with an exponential current-voltage characteristic, of a photocurrent source plus a new term representing additional recombination losses in the i-layer of the device. This model/equivalent circuit matches the I(V) curves of a-Si:H cells over an illumination range of six orders of magnitude. The model clearly separates effects related to the technology of the device (series and parallel resistance) and effects related to the physics of the p-i-n junction (recombination losses). It also allows an effective /spl mu//spl tau/ product in the i-layer of the device to be determined, characterizing its state of degradation.
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