High power InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers grown by two step MOVPE

Data are presented on device results from buried heterostructure InGaAs-GaAs strained quantum well lasers with In0.49Ga0.51P cladding layers (λL = 980 nm). AR-HR coated buried heterostructure lasers with a p-n InGaP current blocking junction show low laser thresholds of 3.1 mA and high output powers of 95 mW both measured CW at RT, and this is the first demonstration of InGaAs-GaAs-InGaP buried heterostructure lasers entirely grown by a two step MOVPE process.