X射线光电子能谱
衰减全反射
分析化学(期刊)
水蒸气
蚀刻(微加工)
氧化物
傅里叶变换红外光谱
化学
氟
氢
红外光谱学
等离子体
溴化氢
红外线的
单色仪
材料科学
化学工程
光学
色谱法
有机化学
工程类
物理
光电子学
量子力学
溴
图层(电子)
波长
作者
Jun Kikuchi,Masao Iga,Hiroki Ogawa,Shuzo Fujimura,Hiroshi Yano
摘要
NF 3 was injected into the downstream of hydrogen and water vapor plasma to produce etching species without generating fluorine atoms, and native oxides on Si(111) surfaces formed in H 2 SO 4 /H 2 O 2 solution were removed. The absence of fluorine atoms in the plasma and the downstream was confirmed by monitoring with a monochromator and an ESR spectrometer, respectively. Thus, etching of the quartz surface of a chamber which led to particle generation was not observed. The Si surfaces after the downstream treatment were investigated and compared with that after HF wet cleaning using attenuated total reflection Fourier transform infrared (FT-IR ATR) spectroscopy and X-ray photoelectron spectroscopy (XPS).
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