Electrostatic Modulation of LaAlO3/SrTiO3 Interface Transport in an Electric Double‐Layer Transistor

Advanced Materials InterfacesVolume 1, Issue 1 1300001 Communication Electrostatic Modulation of LaAlO3/SrTiO3 Interface Transport in an Electric Double-Layer Transistor Wei-Nan Lin, Wei-Nan Lin Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 SingaporeSearch for more papers by this authorJun-Feng Ding, Jun-Feng Ding Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 SingaporeSearch for more papers by this authorShu-Xiang Wu, Shu-Xiang Wu Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 SingaporeSearch for more papers by this authorYong-Feng Li, Yong-Feng Li Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 SingaporeSearch for more papers by this authorJames Lourembam, James Lourembam Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 SingaporeSearch for more papers by this authorSantiranjan Shannigrahi, Santiranjan Shannigrahi Institute of Materials Research and Engineering, Singapore, 117602 SingaporeSearch for more papers by this authorShi-Jie Wang, Shi-Jie Wang Institute of Materials Research and Engineering, Singapore, 117602 SingaporeSearch for more papers by this authorTom Wu, Corresponding Author Tom Wu Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955–6900 Saudi ArabiaE-mail: tao.wu@kaust.edu.saSearch for more papers by this author Wei-Nan Lin, Wei-Nan Lin Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 SingaporeSearch for more papers by this authorJun-Feng Ding, Jun-Feng Ding Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 SingaporeSearch for more papers by this authorShu-Xiang Wu, Shu-Xiang Wu Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 SingaporeSearch for more papers by this authorYong-Feng Li, Yong-Feng Li Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 SingaporeSearch for more papers by this authorJames Lourembam, James Lourembam Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 SingaporeSearch for more papers by this authorSantiranjan Shannigrahi, Santiranjan Shannigrahi Institute of Materials Research and Engineering, Singapore, 117602 SingaporeSearch for more papers by this authorShi-Jie Wang, Shi-Jie Wang Institute of Materials Research and Engineering, Singapore, 117602 SingaporeSearch for more papers by this authorTom Wu, Corresponding Author Tom Wu Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955–6900 Saudi ArabiaE-mail: tao.wu@kaust.edu.saSearch for more papers by this author First published: 13 November 2013 https://doi.org/10.1002/admi.201300001Citations: 72Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract Electrostatic modulation on the two-dimensional transport of the LaAlO3/SrTiO3 interface in an electric double-layer transistor is demonstrated. The induced insulator-to-metal transition exhibits the nature of charge-density-driven percolation, and the Kondo effect governs the low-temperature interface transport under high bias. The results underscore the important role of inhomogeneity and localized spins in the two-dimensional transport of oxide interfaces. Citing Literature Supporting Information As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Filename Description admi201300001-sup-0001-S1.pdf326.8 KB Supplementary Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume1, Issue1February 13, 20141300001 RelatedInformation