感测放大器
铁电RAM
计算机科学
数据保留
偏移量(计算机科学)
电气工程
可扩展性
CMOS芯片
放大器
计算机硬件
电容器
光电子学
物理
操作系统
电压
工程类
半导体存储器
作者
Yang Jianguo,Qing Luo,Xiaoyong Xue,Haijun Jiang,Qiqiao Wu,Zhongze Han,Yue Cao,Yongkang Han,Chunmeng Dou,Hangbing Lv,Qi Liu,Ming Liu
标识
DOI:10.1109/isscc42615.2023.10067752
摘要
The growing demand for data and code storage has driven the development of emerging embedded nonvolatile memory (eNVM) technologies [1–6]. HZO-based $(\text{Hf}_{0.5}\text{Zr}_{0.5}0_{2})$ ferroelectric random-access memory (FeRAM) is a good candidate because of its high reliability, high speed, good scalability, and CMOS process compatibility [3], [4]. However, challenges still exist in designing robust read/write circuits for high endurance and improved sense margins. In this work, we present a 9-Mb (including ECC) HZO-based nonvolatile FeRAM chip aimed at mass scale production. A TiN/HZO/TiN ferroelectric capacitor (FeCAP) is integrated in the back-end-of-line of a 130nm CMOS process with a 700nm diameter capacitor and a mega-level capacity. A temperature-aware write-voltage driver, with ECC-assisted refresh (ECC-WD), is designed to improve the endurance of FeCAP. The offset-canceled sense amplifier is designed to tolerate a small BL signal margin and to reduce the read bit-error rate (BER). Measurement results show a $2\times$ remnant polarization $(\mathrm{P}_{\mathrm{R}}) > 30\mu\mathrm{C}/\text{cm}^{2}, \mathrm{a} > 10^{12}$ -cycle endurance, a 7ns write and a 5ns read time, a sub-3V operating voltage, and 10-year data retention at $85^{\circ}\mathrm{C}$ .
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