同质结
加法器
单层
材料科学
晶体管
场效应晶体管
逻辑门
光电子学
计算机科学
纳米技术
电子工程
电气工程
工程类
CMOS芯片
兴奋剂
电压
作者
Xueping Li,Zhuojun Wang,Xiaojie Tang,Peize Yuan,Lin Li,Chenhai Shen,Yurong Jiang,Xiaohui Song,Congxin Xia
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-08-27
卷期号:24 (35): 11132-11139
标识
DOI:10.1021/acs.nanolett.4c03556
摘要
Two-dimensional reconfigurable field-effect transistors (FETs) are promising candidates for next-generation computing hardware. However, exploring the cascade design of FETs for logic computing remains challenging. Here, by using density functional theory combined with the nonequilibrium Green's function method, we design a 5 nm split-gate FET based on a monolayer WSe
科研通智能强力驱动
Strongly Powered by AbleSci AI