绝缘体上的硅
栅栏
材料科学
特征(语言学)
光电子学
计算机科学
硅
语言学
哲学
作者
Xiaogang Wang,Jifang Qiu,Yuchen Chen,Lan Ying Wu,Hongxiang Guo,Wei Xing Zheng
标识
DOI:10.1364/cleo_at.2024.jth2a.53
摘要
An inverse-designed dual-etched grating coupler optimized by the adjoint method is numerically demonstrated on a standard 220-nm silicon-on-insulator platform with a minimum feature size of 130nm. The coupling efficiency reaches 79.7% (−0.99dB), rendering it promising for low-cost and large-scale manufacturing by deep ultraviolet lithography.
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