偏振器
横截面
横向磁场
硅
材料科学
光学
物理
光电子学
工程类
结构工程
双折射
作者
Yaxin Yu,Zhenzhao Guo,Shengbao Wu,Jinbiao Xiao
出处
期刊:Journal of The Optical Society of America B-optical Physics
[The Optical Society]
日期:2024-07-23
卷期号:41 (9): 1914-1914
摘要
This study presents the design and experimental demonstration of a high-performance all-silicon transverse magnetic (TM) polarizer. The tilted-elliptical-hole arrays are designed to effectively reflect transverse electric (TE) modes while propagating TM modes with low loss. The device bandwidth (BW) is controlled by changing the tilting angle of the elliptical hole or by combining it with changes in other parameters. The device operates beyond 326 nm (1385–1711 nm) in BW, achieving an average insertion loss (IL) below 1.0 dB and a polarization extinction ratio (PER) over 20 dB. A 20 nm shift in BW can be obtained with a 30° deflection, and an 80 nm shift can be achieved with multiple parameter changes. The experimental results confirm the theoretical analysis. The present device with the advantages of simple structure, flexible design, and broad BW has great potential applications in silicon photonics.
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