Recent advances in GaN-based power devices and integration

Abstract Gallium nitride (GaN) has gained traction in replacing silicon for power electronics applications, due to the high breakdown field, high mobility 2D electron gas (2DEG), and effective n/p-type of doping. This paper reviews three important topics of GaN power devices. One is the voltage-blocking structures needed to operate at high voltage while minimizing conduction loss and switching loss. Another one is the structure to achieve normally-off operation, which is often required for power electronics. The third topic is the monolithic integration of gate drivers and power switches for achieving the ultimate switching speed at a low cost.