Thermal Annealing Restricts the Rotation Domains of Epitaxial β-Ga2O3 Thin Films on Off-Angle Sapphire Substrates, Enabling Ultrahigh-Sensitivity Solar-Blind Deep UV Photodetector

films on sapphire substrates with various off-angles and their influence on device performance. This concept may offer insights into the epitaxial growth and device design of other thin films.