化学气相沉积
纳米技术
GSM演进的增强数据速率
材料科学
过渡金属
化学工程
催化作用
化学
工程类
生物化学
电信
作者
Wei Fu,Mark St. John,Thathsara D. Maddumapatabandi,Fabio Bussolotti,Yong Sean Yau,Ming Lin,Kuan Eng Johnson Goh
出处
期刊:ACS Nano
[American Chemical Society]
日期:2023-08-30
卷期号:17 (17): 16348-16368
被引量:11
标识
DOI:10.1021/acsnano.3c04581
摘要
The manipulation of edge configurations and structures in atomically thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges), as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc). These rich-edge TMD layers offer versatile candidates for probing the physical and chemical properties, and exploring new applications in electronics, optoelectronics, catalysis, sensing and quantum field. In this review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of unique properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this review is to motivate further research and development efforts in using CVD as a scalable approach to harness the benefits of such crystal-edge engineering.
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