High-power single-mode semiconductor lasers based on supersymmetric structures around 795 nm

High-power single-mode laser diodes around 795 nm are widely used in applications such as Rb atomic clocks and nuclear magnetic resonance imaging. We simulate a high-power single-mode semiconductor laser around 795 nm based on a supersymmetric structure. In the lateral direction, the mode stability characteristics are investigated by varying the three waveguides widths and the distances between the middle main waveguide and the two sub-waveguides. Since the left and right waveguides have different widths, the optimal distance from them to the main waveguide is also different. In order to ensure the single-mode operating of the laser, there is a pair of optimized distances from the left and right waveguides to the main waveguide. The distances from the left and right waveguides to the main waveguide are 1 μm and 1.2 μm, respectively, when the widths of the left waveguide, right waveguide and main waveguide are set as 2.3 μm, 3.5 μm and 6 μm, respectively. In the longitudinal direction, a laterally-coupled grating structure is used to achieve longitudinal mode selection. Such lasers are expected to be the next generation of high-power, narrow-linewidth, singlemode laser diodes.