铌酸锂
插入损耗
材料科学
谐振器
薄膜
光电子学
无定形固体
硅
声表面波
光学
纳米技术
物理
化学
有机化学
作者
Omar Barrera,Sinwoo Cho,Lezli Matto,Jack Kramer,Kenny Huynh,Vakhtang Chulukhadze,Yen-Wei Chang,Mark S. Goorsky,Ruochen Lu
出处
期刊:Journal of microelectromechanical systems
[Institute of Electrical and Electronics Engineers]
日期:2023-10-20
卷期号:32 (6): 622-625
被引量:13
标识
DOI:10.1109/jmems.2023.3314666
摘要
This work reports an acoustic filter at 23.5 GHz with a low insertion loss (IL) of 2.38 dB and a 3-dB fractional bandwidth (FBW) of 18.2%, significantly surpassing the state-of-the-art. The device leverages electrically coupled acoustic resonators in 100 nm 128° Y-cut lithium niobate (LiNbO3) piezoelectric thin film, operating in the first-order antisymmetric (A1) mode. A new film stack, namely transferred thin-film LiNbO3 on silicon (Si) substrate with an intermediate amorphous silicon (a-Si) layer, facilitates the record-breaking performance at millimeter-wave (mmWave). The filter features a compact footprint of 0.56 mm2. In this letter, acoustic and EM consideration, along with material characterization with X-ray diffraction and verified with cross-sectional electron microscopy are reported. Upon further development, the reported filter platform can enable various front-end signal-processing functions at mmWave. [2023-0129]
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