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Near‐Infrared Emission of Sm2+ in Oxynitrides

材料科学 近红外光谱 光致发光 荧光粉 半最大全宽 光电子学 发射光谱 发光 发光二极管 光谱学 发射强度 谱线 光学 天文 量子力学 物理
作者
Ying Lü,Yunkai Li,Zhongyuan Li,Rong‐Jun Xie
出处
期刊:Advanced Optical Materials [Wiley]
卷期号:12 (10) 被引量:1
标识
DOI:10.1002/adom.202302303
摘要

Advanced Optical MaterialsEarly View 2302303 Research Article Near-Infrared Emission of Sm2+ in Oxynitrides Ying Lv, Corresponding Author Ying Lv [email protected] orcid.org/0000-0002-8917-4650 Nanchang Key Laboratory of Photoelectric Conversion and Energy Storage Materials, College of Science, Nanchang Institute of Technology, Nanchang, 330099 China College of Materials, Xiamen University, Xiamen, 361005 China E-mail: [email protected]; [email protected]Search for more papers by this authorYunkai Li, Yunkai Li Nanchang Key Laboratory of Photoelectric Conversion and Energy Storage Materials, College of Science, Nanchang Institute of Technology, Nanchang, 330099 ChinaSearch for more papers by this authorZhongyuan Li, Zhongyuan Li Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Normal University, Wuhu, 241000 ChinaSearch for more papers by this authorRong-Jun Xie, Corresponding Author Rong-Jun Xie [email protected] College of Materials, Xiamen University, Xiamen, 361005 China E-mail: [email protected]; [email protected]Search for more papers by this author Ying Lv, Corresponding Author Ying Lv [email protected] orcid.org/0000-0002-8917-4650 Nanchang Key Laboratory of Photoelectric Conversion and Energy Storage Materials, College of Science, Nanchang Institute of Technology, Nanchang, 330099 China College of Materials, Xiamen University, Xiamen, 361005 China E-mail: [email protected]; [email protected]Search for more papers by this authorYunkai Li, Yunkai Li Nanchang Key Laboratory of Photoelectric Conversion and Energy Storage Materials, College of Science, Nanchang Institute of Technology, Nanchang, 330099 ChinaSearch for more papers by this authorZhongyuan Li, Zhongyuan Li Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Normal University, Wuhu, 241000 ChinaSearch for more papers by this authorRong-Jun Xie, Corresponding Author Rong-Jun Xie [email protected] College of Materials, Xiamen University, Xiamen, 361005 China E-mail: [email protected]; [email protected]Search for more papers by this author First published: 16 November 2023 https://doi.org/10.1002/adom.202302303Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract Near-infrared (NIR) luminescent materials hold promising applications in NIR spectroscopy technologies, but the NIR emitters are largely limited to some transition metals with spin-forbidden transitions that lead to low absorption efficiency of the pumping light. Exploring novel efficient NIR emitters is thus an urgent and challenging task for developing high-efficiency NIR luminescent materials. Here, an interesting NIR emission of Sm2+ is reported in BaAlSi5O2N7, which exhibits both a line spectrum at 682 nm and a broadband centered at 778 nm with a full-width at half maximum (FWHM) of 141 nm. Temperature-dependent photoluminescence spectra and decay curves evidence that the thermally assisted electrons crossover (TAEC) process contributes to the enhancement of the broadband NIR emission. The fabricated NIR phosphor-converted light-emitting diode (pc-LED) shows promising potential as a NIR lighting source and proves robust thermal stability under high-temperature aging test. The present surprising NIR emission from Sm2+ in highly stable oxynitrides opens a way to explore efficient and reliable NIR phosphors that are suitable for commercial LED chips. Conflict of Interest The authors declare no conflict of interest. Open Research Data Availability Statement The data that support the findings of this study are available from the corresponding author upon reasonable request. Supporting Information Filename Description adom202302303-sup-0001-SuppMat.pdf707.3 KB Supporting Information Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. References 1a) G. N. A. De Guzman, S. F. Hu, R. S. 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