Gain-switched Ti:Sapphire microchip laser investigation within 78-300 K temperature range

Influence of temperature on gain-switched Ti:Sapphire laser based on a microchip resonator geometry is investigated. Laser performances are described within 78–300K temperature range. A frequency doubled radiation originating from the diode pumped Yb:YAG/Cr:YAG microchip crystal was used as a pump source, providing 2 ns pulses with a maximum energy of 113 μJ. The best output from gain-switched Ti:Sapphire laser was achieved at cryogenic temperature — 16 μJ of the output energy in 2 ns pulse at ∼746 nm wavelength. The corresponding slope efficiency related to incident pump energy was 16 %. Taking into account the upper estimation of the input energy absorbed in the crystal, the slope efficiency with respect to absorbed pump energy was determined to be 27%.