Monolithic Perovskite/Si Tandem Solar Cells—Silicon Bottom Cell Types and Characterization Methods

Abstract As a more efficient alternative to the crystalline Si (c‐Si) cell whose performance is approaching its theoretical limit, perovskite (PVSK)/Si tandem solar cells (TSCs) are attracting attention from academia and industry. The tandem device, which can benefit from the maturity of the c‐Si cells and the high performance of the PVSK solar cell, has undergone tremendous development. The expectation for its commercialization is increasing as the device shows conversion efficiencies surpassing those of single‐junction solar cells. In this perspective article, the recent progress of the PVSK/Si TSC is summarized from a viewpoint balanced between academia and industry, by regrouping reported devices depending on the types of Si bottom cells: passivated emitter rear contact, heterojunction with intrinsic thin layer, and polysilicon‐passivated contact. In addition, opto‐electronic characterization methods of the PVSK/Si TSCs are reviewed, which can provide an in‐depth analysis of the subcells that can facilitate the development.