材料科学
钝化
钙钛矿(结构)
甲脒
琥珀酸酐
电负性
三碘化物
结晶
扩散
琥珀酸
衍生工具(金融)
化学物理
化学工程
纳米技术
物理化学
有机化学
高分子化学
热力学
化学
金融经济学
经济
图层(电子)
色素敏化染料
电解质
电极
工程类
物理
作者
Qi Wang,Yu‐Ting Chen,Xin Chen,Weijian Tang,Wuke Qiu,Xiaopeng Xu,Yihui Wu,Qiang Peng
标识
DOI:10.1002/adma.202307709
摘要
Abstract Minimizing interfacial charged traps in perovskite films is crucial for reducing the non‐radiative recombination and improving device performance. In this study, succinic acid (SA) derivatives varying active sites and spatial configurations are designed to modulate defects and crystallization in perovskite film. The SA derivative with two symmetric Br atoms, dibromosuccinic acid (DBSA), exhibits the optimal spatial arrangement for defect passivation. Experimental and theoretical results indicate that the carboxyl group and atomic Br in DBSA synergistically interact with the under‐coordinated Pb 2+ . Moreover, the strong electronegativity of Br efficiently stabilizes the formamidinium cation via electrostatic interaction. Consequently, film quality is significantly improved and non‐radiative recombination is markedly depressed, resulting in a photoluminesence lifetime of exceeding 4 µs of and a carrier diffusion length of 3 µm. An exceptional efficiency of 25.41% (certified at 25.00%) along with a high fill factor of 84.39% and excellent long‐term operational stability have been achieved finally.
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