PdSe2/MoSe2: a promising van der Waals heterostructure for field effect transistor application

Abstract The field-effect transistor (FET) is a fundamental component of semiconductors and the electronic industry. High on-current and mobility with layer-dependent features are required for outstanding FET channel material. Two-dimensional materials are advantageous over bulk materials owing to their higher mobility, high ON/OFF ratio, low tunneling current, and leakage problems. Moreover, two-dimensional heterostructures provide a better way to tune electrical properties. In this work, the two distinct possibilities of PdSe 2 /MoSe 2 heterostructure have been employed through mechanical exfoliation and analyzed their electrical response. These diffe approaches to heterostructure formation serve as crucial components of our investigation, allowing us to explore and evaluate the unique electronic properties arising from each design. This work demonstrates that the heterostructure possesses a better ON/OFF ratio of ∼5.78 × 10 5 , essential in switching characteristics. Moreover, MoSe 2 provides a defect-free interface to PdSe 2 , resulting in a higher ON current of ∼10 μ A and mobility of ∼63.7 cm 2 V −1 s −1 , necessary for transistor applications. In addition, comprehending the process of charge transfer occurring at the interface between transition metal dichalcogenides is fundamental for advancing next-generation technologies. This work provides insights into the interface formed between the PdSe 2 and MoSe 2 that can be harnessed in transistor applications.