Point defects play a versatile role in modulating ferroelectricity and piezoelectricity, however, the decisive role of point-defect concentration/species in controlling macroscopic performance remains unknown. In this work, defects are implanted by reduced atmosphere annealing and/or Mn doping in Pb0.7Ba0.3ZrO3 ceramics. i) defects induce lattice distortion, internal lattice strain and accordingly, phase structure is changed (Williamson-Hall analysis and Rietveld refinement); ii) ferroelectricity is enhanced for 0 MN and 1 MA sample with contribution of defect polarization (first-order reversal curves). iii) Joule heat is depressed as an enhanced resistivity by carrier annihilation/forming defect complex; iv) ECE behaves distinctly among 0 MN, 1 MA and 1 MH, respectively. 0 MN sample exhibits a ΔTmax of 0.39 K and 1 MA possesses a ΔTmax of 0.34 K. Interestingly, a broad temperature span with a low instability of ∼20 % within 288 K–423 K is obtained in 1 MH sample. This work not only provides a guideline for defects enhancing ferroelectricity and ECE, but also clarifies the reduction-resistant properties of (Pb, Ba)ZrO3 system that are suitable for constructing base-metal multilayer ceramic capacitors in solid-state cooling devices.