A Novel Approach to Suppress the Inhomogeneous Reverse Recovery Behavior of the Body Diode in Superjunction MOSFET

In this paper, a novel approach to suppress the inhomogeneous reverse recovery behavior of the body diode in Superjunction MOSFET is proposed and experimentally demonstrated. It features a heavily doped P-type region embedded in the interface of the termination region. When the Superjucntion MOSFET goes through the reverse recovery period, the heavily doped P-type region accelerates the extraction of the non-equilibrium hole carriers. As a result, the reverse recovery current of the termination region is reduced significantly, which is of great benefit in improving the dI/dt robustness. Experimental results show that by adopting the proposed approach, the dI/dt robustness during the reverse recovery could be improved from 123 A/μs to 1150 A/μs.