Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method

Compared with silicon, gallium nitride, silicon carbide, and other traditional semiconductors, gallium oxide (Ga2O3) who possesses, an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of approximately 8 MV/cm has attracted increasing attention from researchers, especially for the potential application in power devices. Moreover, Ga2O3 material has natural ultraviolet detection ability for photodetectors due to its ultrawide bandgap. These future commercial applications put forward an urgent require for high-quality epitaxial Ga2O3 material in an efficient growth method at a lower cost. Although there are some conventional methods for single crystal Ga2O3 film epitaxial growth such as MBE and MOCVD, these methods always need a vacuum growth environment and expensive equipment. As a fast-growing method, Mist-CVD gives the growth of Ga2O3 in a vacuum-free, process-simple, and low-cost method, which will greatly reduce the cost and facilitate the development of Ga2O3. This review has summarizes the Mist-CVD epitaxy growth mechanism of Ga2O3, recent progress in the Ga2O3 film epitaxial growth, and various device properties based on the Mist-CVD method. Our work aims to provide help for the development of Ga2O3 material growth and device applications.