材料科学
纳米技术
工程物理
非易失性存储器
光电子学
工程类
作者
Hao Wang,Yao Wen,Hui Zeng,Ziren Xiong,Yangyuan Tu,Hao Zhu,Ruiqing Cheng,Lei Yin,Jian Jiang,Baoxing Zhai,Chuansheng Liu,Chongxin Shan,Jun He
标识
DOI:10.1002/adma.202305044
摘要
Abstract The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high‐speed, low‐power, and high‐density memory in the field of integrated circuits. Long‐range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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