锡
钙钛矿(结构)
材料科学
格式化
晶体管
化学工程
光电子学
工程物理
冶金
电气工程
化学
工程类
催化作用
有机化学
电压
作者
Geonwoong Park,Wonryeol Yang,Ao Liu,Huihui Zhu,Filippo De Angelis,Yong‐Young Noh
标识
DOI:10.1016/j.mser.2024.100806
摘要
The lack of high-performance p-type semiconducting materials hinders the integration of complementary metal-oxide semiconductors with well-established n-type metal-oxide counterparts. Although tin halide perovskites are promising p-type material candidates, their practical implementation is hindered by excessive hole concentrations and difficulties in precisely controlling crystallization, which leads to poor device performance and yield. In this paper, we propose a formate pseudohalide engineering method to overcome these issues and demonstrate high-performance tin perovskite thin-film transistors (TFTs). The incorporation of formate anion greatly suppresses the vacancy defects at the surfaces of the perovskite films with an increase in crystallinity and grain size. This reduces the hole concentration and eliminates the dependence on the addition of excessive tin fluoride for hole suppression. Hence, high-performance TFTs with a high average field-effect hole mobility of 57.34 cm2 V−1 s−1 and on/off current ratios surpassing 108 can be achieved, approaching p-channel low-temperature polysilicon devices.
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