Investigation of Latch-Up Immunity in 0.18-f.1M BCD Process with Deep Trench Isolation

Deep Trench Isolation (DTI) is a specialized isolation technique employed in the BCD process to mitigate latch-up issues. Unlike junction isolation, which was typically implemented by guard rings, the DTI offers a significant reduction in layout area due to its physical isolation capabilities. This study delves into the impact of DTI on latch-up immunity between 100-V LDMOS in the I/O circuits and the additional guard ring between the 100-V I/O circuits and 5- V internal circuits. The results of this study will be benefit to the high-voltage IC products, that drawn with reduced layout spacing but having high latch-up immunity.