A New Ultra-Low Voltage Metal Fuse for High Density OTP Applications

This paper presents an innovation in Metal-Fuse one-time-programmable (OTP) memory cell and technology, introducing a novel 1T2R bit cell structure that operates at an ultra-low program voltage. A Current-Divider Via (CDV) technique effectively divides the program current, leading to a significant reduction in the size of the select transistor. Additionally, the proposed OTP memory with an optimized fuse geometry shows a remarkably low program voltage of only 1.2 V and an impressive read window exceeding $5\times 10^{3}$ .