同音
铱
邻苯二甲酸锌
磷光
材料科学
有机发光二极管
共轭体系
量子产额
光化学
化学
量子效率
光致发光
热稳定性
光电子学
催化作用
荧光
有机化学
金属
聚合物
物理
量子力学
图层(电子)
作者
Jie Xue,Lijun Xin,Jiayue Hou,Lian Duan,Ru‐Ji Wang,Yen Wei,Juan Qiao
标识
DOI:10.1021/acs.chemmater.7b00518
摘要
Despite the great potential for applications spanning from military night-vision displays and information-secured devices to civilian medical diagnostics and phototherapy, the development of highly efficient, stable, and low-cost near-infrared (NIR) emitting lumophores is still a formidable challenge. Herein, we report two novel NIR-emitting homoleptic facial Ir(III) complexes based on extended π-conjugated benzo[g]phthalazine ligands, namely, tris[1,4-di(thiophen-2-yl)benzo[g]phthalazine] iridium(III) (Ir(dtbpa)3, 1) and tris[1-(2,4-bis(trifluoromethyl)phenyl)-4-(thiophen-2-yl)benzo[g]phthalazine] iridium(III) (Ir(Ftbpa)3, 2). Actually, these two ligands not only enable simple one-pot synthesis of homoleptic Ir(III) complexes without any catalyst under mild conditions, but also contribute to intense NIR-emission with high photoluminescence quantum yield up to 5.2% at 824 nm for 1 and 17.3% at 765 nm for 2, respectively. Single-crystal structure of 1 demonstrates desired facial form with short Ir–N and Ir–C bonds because of strong coordination and small steric hindrance of those highly conjugated C^N═N ligands. Importantly, the incorporation of CF3 groups in 2 further leads to high thermal stability and a good ability to sublime, thus resulting in ultrapurity for highly efficient NIR-organic light-emitting diodes (NIR-OLEDs) with a high maximum external quantum efficiency of 4.5% at 760 nm and small efficiency roll-off remaining of 3.5% at 100 mA cm–2, values which rank with those of the most efficient NIR-OLEDs with small roll-off and peak emission over 750 nm. Notably, the content percentages of the noble metal in these two complexes (∼10% Ir) are markedly lower by about two-thirds than that of typical green-emitting tris(2-phenylpyridine)iridium (∼30% Ir). The findings may provide a new strategy to develop robust NIR emitters and achieve high efficiency, small roll-off, and low cost simultaneously in NIR-OLEDs for practical applications.
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