黑磷
材料科学
兴奋剂
磷
场效应晶体管
光电子学
晶体管
纳米技术
电气工程
冶金
工程类
电压
作者
Bingchao Yang,Bensong Wan,Qionghua Zhou,Yue Wang,Wentao Hu,Weiming Lv,Qian Chen,Zhongming Zeng,Fusheng Wen,Jianyong Xiang,Shijun Yuan,Jinlan Wang,Baoshun Zhang,Wenhong Wang,Junying Zhang,Bo Xu,Zhisheng Zhao,Yongjun Tian,Zhongyuan Liu
标识
DOI:10.1002/adma.201603723
摘要
Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving airstable black-phosphorus devices.
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