钝化
材料科学
碲化镉光电
光电子学
光伏系统
载流子寿命
共发射极
带隙
太阳能电池
硒
能量转换效率
纳米技术
硅
冶金
电气工程
工程类
图层(电子)
作者
Jinglong Guo,Arun Mannodi‐Kanakkithodi,Fatih G. Sen,Eric Schwenker,Edward S. Barnard,Amit Munshi,Walajabad Sampath,Maria K. Y. Chan,Robert F. Klie
摘要
CdTe-based solar cell efficiency has rapidly improved over the last few years. Some of the reasons have been a change to the absorber composition including the incorporation of selenium, and better front contact and emitter materials in CdTe photovoltaic devices. In addition to the increase in short-circuit current by reducing the bandgap, Se plays other important roles in passivation of defects thus improving the conversion efficiency of CdSeTe/CdTe graded absorber photovoltaic devices. Here, we combine structural and optical characterizations with first principles calculations to investigate the role of Se and Cl segregation in CdSeTe devices. We find that in the presence of Se and Cl, the minority carrier lifetime improves due to a reduction of midgap defect states. We also correlate this effect with defect passivation in CdSeTe devices and suggest innovative ways to further improve CdTe-based photovoltaic efficiency.
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