卤化物
钙钛矿(结构)
探测器
灵敏度(控制系统)
材料科学
辐照
结晶学
单晶
离子键合
X射线
Crystal(编程语言)
阻止力
分析化学(期刊)
光电子学
物理
光学
化学
离子
无机化学
核物理学
电子工程
程序设计语言
有机化学
色谱法
计算机科学
工程类
作者
Qiang Xu,Chen Li,Jing Nie,Yong Guo,Xiang Wang,Bohao Zhang,Xiaoping Ouyang
标识
DOI:10.1021/acs.jpclett.0c03411
摘要
Lead halide perovskite single crystals with a high X-ray stopping power and large μτ product have been successfully used for X-ray detection. However, poor air stability and ionic migration lead to the degradation of the devices for long-term operations. Here, we report a solution-processed lead 0D bulk Cs4PbI6 single crystal, which have I atoms in isolated [PbI6]4–. This 0D Cs4PbI6 single crystal has a μτ product of 9.7 × 10–4 cm2 V–1 and an activation energy of 321.28 meV. We have fabricated a photoconductor device with a symmetric Au/Cs4PbI6/Au sandwich structure, which exhibits a high sensitivity of 451.49 μC Gy–1 cm–2 under 30 keV X-ray irradiation at an applied voltage of 30 V. After storing the device in air at room temperature for three months, the device retains nearly the same sensitivity as the original. These results demonstrate that this 0D Cs4PbI6 perovskite single crystal has great potential for practical X-ray detection applications.
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