钙钛矿(结构)
结晶度
材料科学
能量转换效率
热稳定性
铷
薄膜
铯
相(物质)
图层(电子)
卤化物
分析化学(期刊)
化学工程
甲脒
无机化学
化学
结晶学
光电子学
纳米技术
复合材料
工程类
有机化学
冶金
钾
色谱法
作者
Jyoti V. Patil,Sawanta S. Mali,Chang Kook Hong
出处
期刊:Solar RRL
[Wiley]
日期:2020-04-23
卷期号:4 (7)
被引量:115
标识
DOI:10.1002/solr.202000164
摘要
Due to its excellent thermal stability and high performance, inorganic cesium lead mixed halide (ABX 3 , where A = Cs, B = Pb, and X = I/Br) all‐inorganic perovskite solar cells (IPVSCs) have attracted much interest in optoelectronic applications. However, the film quality, enough absorption by desired film thickness, and nature of partial replacement of cations determine the stability of the CsPbI 2 Br perovskite films. Herein, a hot air method is used to control the thickness and morphology of the CsPbI 2 Br perovskite thin film, and the A‐site (herein, Cs + ) cation is partially incorporated by rubidium (Rb + ) cations for making the stable black phase under ambient conditions. The Rb cation‐incorporated Cs 1− x Rb x PbI 2 Br ( x = 0–0.03) perovskite thin films exhibit high crystallinity, uniform grains, extremely dense, and pinhole‐free morphology. The fabricated device with its Cs 0.99 Rb 0.01 PbI 2 Br perovskite composition with poly(3‐hexylthiophene‐2,5‐diyl) as a hole‐transporting layer exhibits a power conversion efficiency (PCE) of 17.16%, which is much higher than that of CsPbI 2 Br‐based IPVSCs. The fabricated Cs 0.99 Rb 0.01 PbI 2 Br‐based IPVSC devices retain >90% of the initial efficiency over 120 h at 65 °C thermal stress, which is much higher than that of CsPbI 2 Br samples.
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