The effect of annealing temperature on the physical properties of Cu2O thin film deposited by SILAR method

Cu2O film was deposited on a glass substrate at 70 °C by the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The Cu2O film was annealed in an air atmosphere at 100 °C, 300 °C, and 500 °C temperatures for 1 h and the effect of the annealing temperature on the physical properties was investigated. The phase-transition temperature that corresponds to the transformation from Cu2O to CuO was occurred at temperature of approximately 300 °C with annealing process. The energy band gap (Eg) was reduced from 2.57 eV to 1.91 eV with the increasing annealing temperature. Hall measurement revealed that the film showed p-type conductivity and the resistivity (ρ) of Cu2O deposited at 70 °C and annealed 100 °C were calculated as 6.12 × 104 and 7.44 × 103 Ωcm, respectively, while the film annealed at 300 °C and 500 °C the resistivity of CuO was found to be 8.23 × 103 and 5.11 × 102 Ωcm, respectively.