Prolonged electron lifetime in sulfur vacancy-rich ZnCdS nanocages by interstitial phosphorus doping for photocatalytic water reduction

Sulfur vacancy-rich ZnCdS nanocages with interstitial P dopant atoms were fabricated. The promoted Fermi level caused by interstitial P doping facilitates the S vacancy level to be an effective electron trapping center, thus enhancing the photocatalytic performance.