Effect of Te-based glass on contact formation and electrical properties in Si solar cells

Numerous studies have focused on applying Te-based glass in crystalline Si solar cells due to their low thermal properties and high chemical resistance. However, the correlation between Te-based glass and contact formation in these solar cells has not been addressed. In this study, we investigated the relationship between the thermal properties of glass frits and the content of the TeO2/(TeO2+PbO) ratio under fast firing. Subsequently, the effect of the contact formation on the electrical characteristics of Si solar cells with Te-based glass frits in Ag paste was observed. The thermal properties of the glass frits and the contact formation between the Ag electrodes and Si wafer were observed. The results showed that the morphology of the interfacial structure significantly affected the electrical properties. The thickness of the glass layer was proportional to the series resistance of the Si solar cells. The lower viscosity of the glass frits was due to the formation of a higher amount of recrystallites on the n+ emitter and the penetration depth of the recrystallites into Si, which resulted in a higher efficiency. It was apparent that the contact formation between the Ag electrodes and the Si wafer was caused by the fused glass frits in Ag paste under fast firing.